STBV45 high voltage fast-switching npn power transistor n medium voltage capability n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed applications: n electronic ballasts for fluorescent lighting description the device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide rbsoa. the STBV45 is designed for use in compact fluorescent lamp application. ? internal schematic diagram september 2000 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 600 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 0.75 a i cm collector peak current (t p < 5 ms) 1.5 a i b base current 0.4 a i bm base peak current (t p < 5 ms) 0.75 a p tot total dissipation at t amb = 25 o c 0.95 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c to-92 1/5
thermal data r thj-amb thermal resistance junction-ambient max 130 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v be = -1.5v) v ce = 600 v 250 m a i ebo emitter cut-off current (i c = 0) v eb = 9 v 1 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 1 ma l = 25 mh 400 v v ce(sat) * collector-emitter saturation voltage i c = 0.2 a i b = 40 ma i c = 0.3 a i b = 75 ma i c = 0.4 a i b = 135 ma 0.2 0.3 0.4 0.5 1.0 1.5 v v v v be(sat) * base-emitter saturation voltage i c = 0.2 a i b = 40 ma i c = 0.3 a i b = 75 ma 1.0 1.2 v v h fe * dc current gain i c = 0.2 a v ce = 5 v i c = 0.4 a v ce = 5 v 10 5 30 20 t f inductive load fall time i c = 0.2 a v clamp = 300 v i b1 = -i b2 = 40 ma l = 3 mh 0.3 m s * pulsed: pulse duration = 300 m s, duty cycle = 1.5 % STBV45 2/5
safe operating area dc current gain collector emitter saturation voltage derating curve dc current gain base emitter saturation voltage STBV45 3/5
dim. mm inch min. typ. max. min. typ. max. a 4.58 5.33 0.180 0.210 b 4.45 5.2 0.175 0.204 c 3.2 4.2 0.126 0.165 d 12.7 0.500 e1.27 0.050 f 0.4 0.51 0.016 0.020 g0.35 0.14 to-92 mechanical data STBV45 4/5
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